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| PD -91649C IRF7526D1 FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint TM A A S G 1 8 K K D D 2 7 VDSS = -30V RDS(on) = 0.20 Schottky Vf = 0.39V 3 6 4 5 Description T op V ie w The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 package, with half the footprint area of the standard SO-8, provides TM the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low TM profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. TM Micro8 TM Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -2.0 -1.6 -16 1.25 0.8 10 20 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient Maximum 100 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see Fig. 9) ISD -1.2A, di/dt 160A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com 1 5/7/99 IRF7526D1 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse Recovery Charge Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Min. -30 --- --- -1.0 0.94 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Min. --- --- --- --- --- Typ. --- 0.17 0.30 --- --- --- --- --- --- 7.5 1.3 2.5 9.7 12 19 9.3 180 87 42 Typ. --- --- --- 30 37 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.20 VGS = -10V, ID = -1.2A 0.40 VGS = -4.5V, ID = -0.60A --- V VDS = VGS, I D = -250A --- S VDS = -10V, I D = -0.60A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, T J = 125C -100 VGS = -20V nA 100 VGS = 20V 11 ID = -1.2A 1.9 nC VDS = -24V 3.7 VGS = -10V, See Fig. 6 --- VDD = -15V --- ID = -1.2A ns --- RG = 6.2 --- RD = 12, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -1.25 A -9.6 -1.2 V TJ = 25C, IS = -1.2A, VGS = 0V 45 ns TJ = 25C, I F = -1.2A 55 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C See Fig. 14 TA = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 30V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Schottky Diode Maximum Ratings IF(av) I SM Max. Units 1.9 A 1.3 120 11 A Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 92 pF 3600 V/s IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7526D1 Power Mosfet Characteristics 10 TOP VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 -I D , Drain-to-S ource Current (A ) 1 -I D , Drain-to-S ource Current (A ) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 1 -3.0 V -3.0 V 2 0 s P U L S E W ID TH TJ = 25 C A 0.1 1 10 0.1 0.1 0.1 1 2 0 s P U L S E W ID TH TJ = 15 0C A 10 -V D S , D rain-to-S ource V oltage (V ) -V D S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 -I D , D rain-to -So urc e C urre nt (A ) TJ = 2 5C R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d) I D = -1 .2A 1.5 T J = 1 5 0 C 1 1.0 0.5 0.1 3.0 3.5 4.0 4.5 5.0 V D S = -1 0 V 2 0 s P U L S E W ID T H 5.5 6.0 6.5 7.0 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 A -VG S , G a te -to -S o u rc e V o lta g e (V ) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7526D1 Power Mosfet Characteristics 400 20 -V G S , G ate-to-S ource V oltage (V ) V GS C is s C rs s C oss = = = = 0V, f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C gd I D = -1 .2 A V D S = -24 V V D S = -15 V 16 C , Capacitance (pF) 300 C iss C o ss 200 12 8 C rss 100 4 0 1 10 100 A 0 0 2 4 6 FO R TE S T CIR C U IT S E E FIG U R E 9 8 10 12 A -VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 -IS D , R everse Drain C urrent (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) -I D , D rain C urrent (A) 10 T J = 1 50 C 1 100s T J = 2 5 C 1 1m s 0.1 0.4 0.6 0.8 1.0 V G S = 0V 1.2 A 0.1 1 T A = 25 C T J = 15 0C S ing le P u lse 10 10m s A 100 1.4 -VS D , S ourc e-to-D rain V oltage (V ) -V D S , D rain-to-S ourc e V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7526D1 Power Mosfet Characteristics 1000 Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 P DM t1 t2 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient RDS (on) , Drain-to-Source On Resistance () 1.5 RDS (on) , Drain-to-Source On Resistance () 0.60 0.50 1.0 V G S = -4.5V 0.40 I 0.30 = -2.0A 0.5 0.20 V G S = -1 0V 0.0 0 1 2 3 4 A 0.10 3 6 9 12 15 A -ID , D rain C urrent (A ) -V GS , G ate-to-S ourc e V oltage (V ) Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7526D1 Schottky Diode Characteristics 10 100 10 TJ = 15 0 C 1 2 5 C Reverse Current - IR (mA) 1 1 0 0C 7 5C 5 0 C 0.1 0.01 Instantan eo us F orw a rd C urrent - I F (A) 2 5 C 0.001 0.0001 0 1 5 10 15 20 25 30 A R eve rse V o lta ge - V R (V ) T J = 1 50C T J = 1 25C A llow ab le Am b ient Tem perature - (C ) T J = 2 5C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 D D D D D = 3 /4 = 1 /2 = 1 /3 = 1 /4 = 1 /5 V r = 8 0 % R ated R t hJA = 1 0 0 C /W Sq uare w ave 0.1 0.0 0.2 0.4 0.6 F DC 0.8 1.0 FForward V oltage D ro p - V F M (V ) orwa rd Voltage Drop - V (V) A A v era ge F orw ard C urrent - I F(A V ) (A ) Fig. 12 -Typical Forward Voltage Drop Characteristics Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7526D1 Micro8TM Package Details LE AD A SSIGN M EN TS D -B3 DDDD 8765 3 E -A1234 SSSG S 1 G 1 S2 G 2 8765 H 0.2 5 (.010) M A M S IN G LE 1234 D UAL 1234 D1 D1 D2 D2 8765 D IM A A1 B C D e e1 E H L INC H ES M IN .0 36 .0 04 .0 10 .005 .116 M AX .044 .008 .014 .007 .120 M ILLIME TE RS MIN 0 .91 0 .10 0 .25 0.13 2.95 M AX 1.11 0.20 0.36 0.18 3.05 .0256 B ASIC .0128 B ASIC .1 16 .188 .016 0 .120 .198 .026 6 0.65 BAS IC 0.33 BAS IC 2.95 4.78 0.4 1 0 3.0 5 5.03 0.66 6 e 6X e1 A -CB 8X 0.0 8 (.0 03) M A1 C AS BS 0.10 (.004) L 8X C 8X RE C OM M E ND ED F O O TP RIN T 1.04 ( .0 41 ) 8X 0.38 8X ( .015 ) 3.2 0 ( .126 ) 4.2 4 5.2 8 ( .167 ) ( .2 08 ) N O TE S : 1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 . 2 CO N T R OL L IN G DIME N S ION : INC H . 3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H . 0.65 6X ( .02 56 ) Part Marking www.irf.com 7 IRF7526D1 Micro8TM Tape & Reel T E R M IN AL N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) FE E D D IR E C TIO N N OTES: 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice . 5/99 8 www.irf.com |
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